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孙杰,裴凡衔,baidongmei,Junting Zhang,wangjianli.Room temperature ferromagnetism and transport properties in InN/VTe2 van der Waals heterostructures,2022,598, 153781 (2022)
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叶浩燊,刘丽莎,baidongmei,G. P. Zhang,Junting Zhang,wangjianli.Room-temperature spin valve effect in TiCr2N4 monolayer,2022,10 (34), 12422–12427 (2022)
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叶浩燊,Zhu, Yijie,baidongmei,Junting Zhang,吴小山,wangjianli.Spin valve effect in VN/GaN/VN van der Waals heterostructures,2021,卷: 103期: 3
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叶浩燊,盛昊昊,baidongmei,Junting Zhang,wangjianli.Strain and electric field tuned electronic properties of BAs/MoSe2 van der Waals heterostructures for alternative electrodes and photovoltaic cell in photocatalysis,2020,v 120,
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薛萌萌,魏梦杰,盛昊昊,baidongmei,wangjianli.Tunable electronic properties of silicene based heterojunctions with ultrathin high-к La2O3 gate dielectric,2020,v 147,
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朱怡杰,苏梦,叶浩燊,baidongmei,wangjianli.Interface and transport properties of InN/VSi2P4 van der Waals magnetic heterostructures,2023,108 (12), 125413-1-10 (2023)
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朱怡杰,张丁文,叶浩燊,baidongmei,李明,G.P. Zhang,Junting Zhang,wangjianli.Magnetic and electronic properties of AlN/VSe2 van der Waals heterostructures from combined first-principles and Schr?dinger-Poisson simulations,2022,18 (2), 024012 (2022)
