Hits:

DOI number:10.1088/1361-6528/ab8b0d

Affiliation of Author(s):数学学院

Funded by:其他课题

First Author:盛昊昊

Co-author:朱怡杰,baidongmei,吴小山,wangjianli

Indexed by:Journal paper

Document Code:5b5bb29475fd92540175feb828f5039e

Volume:v 31,n 31,

ISSN No.:09574484

Translation or Not:no

Date of Publication:2020-07-31

Pre One:Tunable electronic properties of silicene based heterojunctions with ultrathin high-к La2O3 gate dielectric Next One:Strain and electric field tuned electronic properties of BAs/MoSe2 van der Waals heterostructures for alternative electrodes and photovoltaic cell in photocatalysis