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SiCMOSFET三相两电平变换器死区设置方法
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Disigner of the Invention:张雷,张嘉航,WU Xiaojie,石聪聪,张永磊,魏琛

Type of Patent:国内

State of Patent:专利授权

Application Number:201810549178.X

Number of Inventors:7

Service Invention or Not:no

Application Date:2018-05-31

Authorization Date:2020-01-07

First Author:yuanxibo

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School/Department:电气工程学院

Gender:Male

Degree:Doctor

Alma Mater:清华大学

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