Transfer printing of fully formed microscale InGaP/GaAs/InGaNAsSb cell on Ge cell in mechanically-stacked quadruple-junction architecture

• DOI number:10.1016/j.solener.2019.11.046
• Affiliation of Author(s):材料与物理学院
• Funded by:省、市、自治区科技项目
• First Author:shenling
• Co-author:Li, Hongxi,mengxianwen,Li, Feng
• Indexed by:Journal paper
• Document Code:5b5bb29476f436ce0176f472338d0324
• Volume:v 195,p6-13
• ISSN No.:0038092X
• Translation or Not:no
• Date of Publication:2020-01-01