一种空心立方Ni3S2/CuS2超级电容器电极材料的制备方法及其应用

• School Sign:第一单位
• Disigner of the Invention:赵后强,chenzheng,Sui Yanwei,qijiqiu,Zangping,Meng Qingkun
• Type of Patent:国内
• State of Patent:专利授权
• Application Number:201911161986.X
• Service Invention or Not:no
• Application Date:2019-11-25
• Authorization Date:2021-02-15
• First Author:heyezeng