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Lifetime Prediction of SiC MOSFET by LSTM Based on IGWO Algorithm
Release time:2025-12-24  Hits:

DOI number:DOI10.3390/electronics14224486
Affiliation of Author(s):电气工程学院
Funded by:自选课题
First Author:daipeng
Co-author:鲍君仪,gongzheng,高明畅,徐庆
Indexed by:Journal paper
Volume:2025, 14(22)
ISSN No.:2079-9292
Translation or Not:no
Date of Publication:2025-11-15

Next One:Optimal Asymmetric Duty Modulation for Dual Active Bridge Converters with DC Blocking Capacitors

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