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ZnO-In2O3纳米半导体晶体气敏材料制备方法
Release time:2020-10-30  Hits:

Affilication of Author(s):材料与物理学院
Disigner of the Invention:宣瑞飞,孙毅成,耿浩燃,chenhui
Type of Patent:国内
State of Patent:专利授权
Application Number:201410102645.6
Number of Inventors:5
Service Invention or Not:no
Application Date:2014-03-19
Authorization Date:2016-03-30
First Author:caoxichuan