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一种气隙不对称开关磁阻直线电机磁路建模方法
Release time:2020-10-30 Hits:Disigner of the Invention:闫文举,刘征,陈磊,wangxing,孙萌,邓文慧
Type of Patent:国内
State of Patent:专利授权
Application Number:201610218483.1
Number of Inventors:7
Service Invention or Not:no
Application Date:2016-04-08
Authorization Date:2018-10-23
First Author:Hao Chen
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Next One:三级马尔科夫模型定量分析开关磁阻电机系统可靠性评估方法
Hao Chen
Gender:Male
Alma Mater:南京航空航天大学
Degree:Doctor
School/Department:电气工程学院
Business Address:文昌校区教四楼105
Contact Information:13013993107, hchen@cumt.edu.cn
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