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论文成果
Structural reconstruction and visible-light absorption versus internal electrostatic field in two-dimensional GaN–ZnO alloys
- 发布时间：2021-07-16
- 点击次数：
- 影响因子：8.307
- DOI码：10.1039/d1nr02548a
- 所属单位：中国矿业大学
- 教研室：材料与物理学院
- 发表刊物：Nanoscale
- 刊物所在地：中国
- 项目来源：国家自然科学基金
- 摘要：GaN–ZnO alloys are more promising semiconductors than their counterparts for optoelectronic applications due to the abrupt red shift in the visible-light range. Unfortunately, the strong internal electrostatic field (IEF) seriously hinders to further improve the optoelectronic performance due to the charge density of surface states. We point out a structural model to extremely improve the visible-light absorption by overcoming the bottleneck of the IEF in the two-dimensional (2D) nonisovalent alloys. The novel haeckelite (8|4) configuration with the nearly zero IEF shows much better optoelectronic performances than the conventional wurtzite configuration. Meanwhile, we explore the thickness-driven structural transitions from the planar hexagonal to the 8|4 and to the wurtzite configurations. The visible-light absorption efficiency quickly rises up from the bulk wurtzite to the bulk 8|4 to the 2D 8|4 and to the MoS2-based heterostructures with the different-layer 8|4 configurations. The heterointerfacial coupling is an effective way to further reduce the IEF and hence to significantly improve the visible-light absorptions by enlarging the population of band edge states in the 8|4 configuration. We suggest that the 8|4 configuration is more prospective for diverse optoelectronic applications in 2D GaN–ZnO alloys than in binary counterparts.
- 第一作者：梁汉普 段益峰
- 论文类型：期刊论文
- 通讯作者：段益峰
- 论文编号：11994
- 卷号：13
- 期号：27
- 页面范围：11994
- 是否译文：否
- 发表时间：2021-07-16
- 收录刊物：SCI
- 发布期刊链接：https://pubs.rsc.org/en/content/articlelanding/2021/nr/d1nr02548a#!divAbstract